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40V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to battery Load switching.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||25 ±V|
||IDS| @TA = +25°C (A)||11 A|
|PD @TA = +25°C (W)||2.1 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||11 mΩ|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||15 mΩ|
||VGS(TH)| Max (V)||2.5 V|
|QG Typ @ |VGS| = 4.5V (nC)||47.5 (@5V) nC|
|CISS Typ (pF)||4234 pF|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2553||2021-11-12||2022-02-12||Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test (A/T) Site with Standardization of Assembly Bill of Materials at CAT for Select Discrete Products|
|PCN-2425||2019-10-04||2020-01-04||Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.