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DMP2008USS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 13 A
PD @TA = +25°C (W) 2.3 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 9 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 11 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 16 mΩ
|VGS(TH)| Min (V) 1
|VGS(TH)| Max (V) 1 V
CISS Typ (pF) 6820 pF
CISS Condition @|VDS| (V) 10 V
QG Typ @ |VGS| = 4.5V (nC) 76
QG Typ @ |VGS| = 10V (nC) 159

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

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