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DMP1100UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in an ultra-small 0.8mmx0.8mm package.

Feature(s)

  • Built-In G-S Protection Diode Against ESD 2kV HBM.
  • Ultra-Small 0.8mm x 0.8mm Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Portable Applications
  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 3.2 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 83 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 96 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 150 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 0.8 V
QG Typ @ |VGS| = 4.5V (nC) 9 nC
CISS Typ (pF) 680 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs