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DMNH6012LK3Q

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
  • Low On-Resistance
  • Low Input Capacitance

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC/DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 80 A
PD @TA = +25°C (W) 3.8 W
RDS(ON)Max @ VGS(10V)(mΩ) 12 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 18 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 16.3 nC
QG Typ @ |VGS| = 10V (nC) 35.2 nC
CISS Typ (pF) 1926 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2591 2022-06-21 2022-09-21 Change of Lead Frame Type for Select Automotive Products