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DMN62D0UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.49 A
PD @TA = +25°C (W) 0.74 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 2000 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.0 V
QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
CISS Typ (pF) 32 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf