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DMN53D0LV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.35 A
PD @TA = +25°C (W) 0.43 W
RDS(ON)Max @ VGS(10V)(mΩ) 1600 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 2500 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 4500 mΩ
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 nC
CISS Typ (pF) 46 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN53D0LV-7

DMN53D0LV-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Future Electronics - Asia 117000 9/24/2022 Singapore Contact Sales
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products