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DMN4800LSSQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 8.6 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max @ VGS(10V)(mΩ) 14 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 20 mΩ
|VGS(TH)| Max (V) 1.6 V
QG Typ @ |VGS| = 4.5V (nC) 8.7 (@5V) nC
CISS Typ (pF) 798 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf