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DMN4060SVT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Description

This new generation 45V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld and lighten application

Application(s)

  • Handheld application
  • DC-DC Converters
  • Power management functions
  • Backlighting
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 45 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 4.8 A
    PD @TA = +25°C (W) 1.8 W
    RDS(ON)Max @ VGS(10V)(mΩ) 46 mΩ
    RDS(ON)Max @ VGS(4.5V)(mΩ) 62 mΩ
    |VGS(TH)| Max (V) 3 V
    QG Typ @ |VGS| = 4.5V (nC) 10.4 nC
    QG Typ @ |VGS| = 10V (nC) 22.4 nC

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    DMN4060SVT-7

    DMN4060SVT-7

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    RS Components - Spain 1175 9/25/2022 Spain Contact Sales
    RS Components - UK 1175 9/25/2022 England Buy Now
    Future Electronics - Asia 3000 9/24/2022 Singapore Contact Sales
    Request Sample

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.