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DMN32D0LV

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 0.68 A
PD @TA = +25°C (W) 0.48 W
RDS(ON)Max @ VGS(2.5V)(mΩ) 1.5 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 2.2 mΩ
|VGS(TH)| Min (V) 0.6 V
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 0.62 nC
CISS Typ (pF) 44.8 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf