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DMN3135LVT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N+N
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 3.5 A
    PD @TA = +25°C (W) 1.27 W
    RDS(ON)Max @ VGS(10V)(mΩ) 60 mΩ
    RDS(ON)Max @ VGS(4.5V)(mΩ) 100 mΩ
    |VGS(TH)| Max (V) 2.2 V
    QG Typ @ |VGS| = 4.5V (nC) 4.1 nC
    QG Typ @ |VGS| = 10V (nC) 9 nC
    CISS Typ (pF) 305 pF

    Related Content

    Packages

    Technical Documents

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    DMN3135LVT-7

    DMN3135LVT-7

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Farnell, An Avnet Company 2500 9/25/2022 England Buy Now
    Request Sample

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products