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DMN3060LVT

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30, 30 V
|VGS| (±V) 12, 12 ±V
|IDS| @TA = +25°C (A) 3.6, 3.6 A
PD @TA = +25°C (W) 1.16 W
RDS(ON)Max @ VGS(10V)(mΩ) 60, 60 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 100, 100 mΩ
|VGS(TH)| Max (V) 1.8, 1.8 V
QG Typ @ |VGS| = 4.5V (nC) 5.6, 5.6 nC
QG Typ @ |VGS| = 10V (nC) 11.3, 11.3 nC
CISS Typ (pF) 395, 395 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC