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DMN3026LVTQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • Low On-Resistance
  • Fast Switching Speed

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.6 A
PD @TA = +25°C (W) 1.5 W
RDS(ON)Max @ VGS(10V)(mΩ) 23 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 30 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 5.7 nC
QG Typ @ |VGS| = 10V (nC) 12.5 nC
CISS Typ (pF) 643 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf