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DMN3018SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance  (RDS(ON)) and yet maintain superior switching performance, making it  ideal for high efficiency power management applications. 

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 7.3 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max @ VGS(10V)(mΩ) 21 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 35 mΩ
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 6 nC
QG Typ @ |VGS| = 10V (nC) 13.2 nC
CISS Typ (pF) 697 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC