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DMN3016LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 10.3 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(10V)(mΩ) 12 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 16 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 11.3 nC
QG Typ @ |VGS| = 10V (nC) 25.1 nC
CISS Typ (pF) 1415 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN3016LSS-13

DMN3016LSS-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Avnet EU 5000 6/25/2022 Germany Buy Now
Arrow Electronics 774 6/25/2022 United States Buy Now
Arrow Electronics 2500 6/25/2022 United States Buy Now
Digi-Key Electronics 5000 6/25/2022 Europe, Asia, North America Buy Now
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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.