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DMN3009SSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Motor Control
  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 15 A
PD @TA = +25°C (W) 1.8 W
RDS(ON)Max @ VGS(10V)(mΩ) 5.5 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 7.5 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 20 nC
QG Typ @ |VGS| = 10V (nC) 42 nC
CISS Typ (pF) 2000 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN3009SSS-13

DMN3009SSS-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 45 6/27/2022 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.

FAQs

Related Application FAQs