Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
20V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||Yes|
||VDS| (V)||20 V|
||VGS| (±V)||12 ±V|
||IDS| @TA = +25°C (A)||11 A|
|PD @TA = +25°C (W)||2 W|
|RDS(ON)Max @ VGS(4.5V)(mΩ)||13.5 mΩ|
|RDS(ON)Max @ VGS(2.5V)(mΩ)||15.5 mΩ|
||VGS(TH)| Max (V)||1.2 V|
|QG Typ @ |VGS| = 4.5V (nC)||7.3 nC|
|QG Typ @ |VGS| = 10V (nC)||14.6 nC|