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DMN2041UVT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
  • https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No Y/N
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 5.8 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 28 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 32 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 40 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 0.9 V
CISS Typ (pF) 689 pF
CISS Condition @|VDS| (V) 10 V
QG Typ @ |VGS| = 4.5V (nC) 9.1

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs