Diodes Menu Close

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

Back to MOSFET Master Table

DMN2029UVT

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • Low On-Resistance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 6.8 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 24 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 32 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 7.1 nC
CISS Typ (pF) 646 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs