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DMN2024UVT

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

• Low On-Resistance
• Low-Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage

Application(s)

• Backlighting
• DC-DC Converters
• Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 7 A
PD @TA = +25°C (W) 1.6 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 24 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 28 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 34 mΩ
|VGS(TH)| Max (V) 0.9 V
QG Typ @ |VGS| = 4.5V (nC) 7.1 nC
CISS Typ (pF) 647 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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