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DMN15M5UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state
resistance (RSS(ON)) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.

Feature(s)

  • CSP with Footprint 2.14mm × 1.67mm
  • Height = 0.11mm for Low Profile
  • ESD Protection of Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 10.5 ±V
|IDS| @TA = +25°C (A) 16.5 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 5.1 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 10 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.3 V
CISS Typ (pF) 59 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2474 2020-12-16 2021-03-16 Qualification of Additional Wafer Source for Select Discrete Products

FAQs

Related Application FAQs