Diodes Menu Close

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

Back to MOSFET Master Table

DMN10H170SVTQ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.6 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max @ VGS(10V)(mΩ) 160 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 200 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 4.9 nC
QG Typ @ |VGS| = 10V (nC) 9.7 nC
CISS Typ (pF) 1167 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf