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DMN1019UVT

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance.

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 10.7 A
PD @TA = +25°C (W) 1.73 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 10 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 12 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 14 mΩ
|VGS(TH)| Max (V) 0.8 V
QG Typ @ |VGS| = 4.5V (nC) 28 nC
QG Typ @ |VGS| = 10V (nC) 50.4 (@8V) nC
CISS Typ (pF) 2588 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs