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NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
|Compliance (Only Automotive supports PPAP)||Standard|
|CISS Condition @|VDS| (V)||100|
|CISS Typ (pF)||264|
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||IDS| @TC = +25°C (A)||4.7|
|PD @TC = +25°C (W)||57|
|QG Typ @ |VGS| = 10V (nC)||9.8|
|RDS(ON)Max @ VGS(10V)(mΩ)||1400|
||VGS(TH)| Max (V)||5|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2607||2023-02-22||2023-08-22||Device End of Life (EOL)|