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DMHC6070LSD

60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Feature(s)

  • 2 x N + 2 x P Channels in a SOIC Package
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • DC Motor Control
  • DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Type 2 x N, 2 x P
ESD Diodes (Y|N) No Y/N
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
IDSA +25ºC(A) 3.1, 2.4 A
PDW +25ºC (W) 1.6 W
RDS(ON)Max @ VGS(10V)(mΩ) 100, 170 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 120, 250 mΩ
CISS Typ (pF) 731, 618 pF
QG Typ @ |VGS| = 10V (nC) 11.5, 8.9

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products

FAQs

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