60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Type | 2 x N, 2 x P |
| ESD Diodes (Y|N) | No Y/N |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| IDSA +25ºC(A) | 3.1, 2.4 A |
| PDW +25ºC (W) | 1.6 W |
| RDS(ON)Max @ VGS(10V)(mΩ) | 100, 170 mΩ |
| RDS(ON)Max @ VGS(4.5V)(mΩ) | 120, 250 mΩ |
| CISS Typ (pF) | 731, 618 pF |
| QG Typ @ |VGS| = 10V (nC) | 11.5, 8.9 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
