Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | 2N2P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 2.3, 2.9 A |
| PD @TA = +25°C (W) | 2.1 W |
| RDS(ON)Max @ VGS(10V)(mΩ) | 250, 160 mΩ |
| RDS(ON)Max @ VGS(4.5V)(mΩ) | 300, 200 mΩ |
| |VGS(TH)| Min (V) | 1, 1 V |
| |VGS(TH)| Max (V) | 3, 3 V |
| QG Typ @ |VGS| = 10V (nC) | 17.5, 9.7 nC |
| CISS Typ (pF) | 1239, 1167 pF |
| CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
