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DMG6601LVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 30, 30 V
|VGS| (±V) 12, 12 ±V
|IDS| @TA = +25°C (A) 3.8, 2.5 A
PD @TA = +25°C (W) 1.3 W
RDS(ON)Max @ VGS(10V)(mΩ) 55, 110 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 65, 142 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 85, 190 mΩ
|VGS(TH)| Max (V) 1.5, 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 5.4, 6.5 nC
QG Typ @ |VGS| = 10V (nC) 12.3, 13.8 nC
CISS Typ (pF) 422, 541 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.