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DMG4N60SK3 (Obsolete)

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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low Gate Input Resistance
  • Low Input Capacitance


  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 532
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) N/A
|IDS| @TC = +25°C (A) 3.7
PD @TA = +25°C (W) N/A
PD @TC = +25°C (W) 48
Polarity N
QG Typ @ |VGS| = 10V (nC) 14.3
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max @ VGS(1.8V)(mΩ) N/A
RDS(ON)Max @ VGS(10V)(mΩ) 2300
RDS(ON)Max @ VGS(2.5V)(mΩ) N/A
RDS(ON)Max @ VGS(4.5V)(mΩ) N/A
|VDS| (V) 600
|VGS| (±V) 30
|VGS(TH)| Max (V) 4.5

Related Content



Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life