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DMG4822SSDQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Low Input/Output Leakage
  • Low Gate Resistance 
  • Fast Switching Speed

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • DC-DC Converters
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 10 A
PD @TA = +25°C (W) 1.42 W
RDS(ON)Max @ VGS(10V)(mΩ) 21 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 32.5 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 5 nC
QG Typ @ |VGS| = 10V (nC) 10.5 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC