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DMG1023UVQ

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Dual P-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • DC-DC Converters
  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P+P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 1.03 A
PD @TA = +25°C (W) 0.53 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 750 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 1050 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 1500 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.62 nC
CISS Typ (pF) 59 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMG1023UVQ-7

DMG1023UVQ-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Rutronik GmbH 240 9/23/2022 Germany Buy Now
Request Sample

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2570 2022-03-02 2022-06-02 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire, New Mold Compound Type, and New Die Attach Material for Select Automotive Products