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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device


  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 25, 25 V
|VGS| (±V) 8, 8 ±V
|IDS| @TA = +25°C (A) 0.68, 0.46 A
PD @TA = +25°C (W) 0.9 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 450, 1100 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 600, 1500 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 730, 2200 mΩ
|VGS(TH)| Min (V) 0.45, 0.5 V
|VGS(TH)| Max (V) 1.1, 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 1.64, 1.1 nC
CISS Typ (pF) 50, 63 pF
CISS Condition @|VDS| (V) 10, 10 V

Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products