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DMC2710UVQ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
    • N-Channel: VGS(th) < 1V
    • P-Channel: VGS(th) < -1V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ DMC2710UVQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery-operated systems and solid-state relays
  • Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, and so on
  • Power supply converter circuits

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 20, 20 V
|VGS| (±V) 6, 6 ±V
|IDS| @TA = +25°C (A) 1.1, 0.8 A
PD @TA = +25°C (W) 0.8 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 400, 700 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 500, 900 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 700, 1300 mΩ
|VGS(TH)| Min (V) 0.5, 0.5 V
|VGS(TH)| Max (V) 1, 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6, 0.7 nC
CISS Typ (pF) 42, 49 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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