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DMC2020USD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Reduced footprint with two discretes in a single SO8
  • Low gate drive
  • Low input capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor control
  • DC-DC Converters
  • Power management functions
  • Notebook Computers and Printers

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 20, 20 V
|VGS| (±V) 10, 10 ±V
|IDS| @TA = +25°C (A) 8.5, 6.8 A
PD @TA = +25°C (W) 1.8 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 20, 33 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 28, 45 mΩ
|VGS(TH)| Min (V) 0.5, 0.4 V
|VGS(TH)| Max (V) 1.5, 1 V
QG Typ @ |VGS| = 4.5V (nC) 11.6, 15.4 nC
CISS Typ (pF) 1149, 1610 pF
CISS Condition @|VDS| (V) 10, 10 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC