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650V FIELD STOP IGBT IN TO247
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The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.
|Anti Parallel Diode||Yes|
|EOFF typ @ +25°C (mJ)||0.4|
|EON typ @ +25°C (mJ)||0.5|
|IC @ +100°C (A)||40|
|IC @ +25°C (A)||80|
|Power Dissipation @ TC = +25°C (W)||230|
|Short Circuit (µs)||N/A|
|VCE(sat) max @ +25°C (V)||2.3|
|VCE(sat) typ @ +25°C (V)||1.8|
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
|PCN #||Issue Date||Implementation Date||Subject|
|PCN-2561||2022-02-17||2022-08-17||Device End of Life (EOL)|