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DGD2101M

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

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Description

The DGD2101M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation. The 50ns (max) propagation delay matching between the high and the low side drivers allows high frequency switching.

The DGD2101M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. The low-side gate driver and logic share a common ground.

The DGD2101M is available in a space saving 8-pin SO (Type TH) package, the operating temperature extends from -40°C to +125°C.

Feature(s)

  • Floating High-side Driver in Bootstrap Operation to 600V
  • Drives Two N-Channel MOSFETs or IGBTs in High-side / Low-side Configuation
  • Outputs Tolerant to Negative Transients
  • Wide Low-side Gate Driver and Logic Supply: 10V to 20V
  • Logic Inputs CMOS and TTL Compatible (Down to 3.3V)
  • Schmitt Triggered Logic Inputs with Internal Pull Down
  • Undervoltage Lockout for VCC
  • Space Saving SO-8 (Type TH) Package Available
  • Extended Temperature Range: -40°C to +125°C

Application(s)

  • DC-DC Converters 
  • DC-AC Inverters
  • AC-DC Power Supplies
  • Motor Controls
  • Class D Power Amplifiers

Product Specifications

Product Parameters

Compliance (Only Automotive(Q) supports PPAP) Standard
Offset Voltage Max (V) 600 V
Inputs HIN, LIN
Output Current IO+ (Typ) (mA) 290 mA
Output Current IO- (Typ) (mA) 600 mA
tON (Typ) (ns) 160 ns
tOFF (Typ) (ns) 150 ns
tR (Typ) (ns) 70 ns
tF (Typ) (ns) 35 ns

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Recommended Soldering Techniques

TN1.pdf