Diodes Menu Close

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

Back to Half-Bridge Gate Drivers



Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.


The DGD1003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD1003’s high side to switch to 150V in a bootstrap operation.

The DGD1003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. The DGD1003 has a fixed internal deadtime of 420ns (typical).

The DGD1003 is offered in the V-DFN3035-8 package and operates over an extended -40°C to +125°C temperature range.


  • Floating High-Side Driver in Bootstrap Operation to 150V
  • Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration
  • 290mA Source/600mA Sink Output Current Capability
  • Outputs Tolerant to Negative Transients
  • Internal Dead Time of 420ns to Protect MOSFETs
  • Wide Low Side Gate Driver Supply Voltage: 10V to 20V
  • Logic Input (HIN and LIN*) 3.3V Capability
  • Schmitt Triggered Logic Inputs
  • Undervoltage Lockout for VCC (Logic and Low Side Supply)
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/


  • DC-DC Converters
  • DC-AC Inverters
  • AC-DC Power Supplies
  • Motor Controls
  • Class D Power Amplifiers

Product Specifications

Product Parameters

Offset Voltage Max (V) 150 V
Inputs HIN, LIN*
Output Current IO+ (Typ) (mA) 290 mA
Output Current IO- (Typ) (mA) 600 mA
Internal Deadtime (Typ) 420 ns
tON (Typ) (ns) 680 ns
tOFF (Typ) (ns) 150 ns
tR (Typ) (ns) 70 ns
tF (Typ) (ns) 35 ns

Related Content


Technical Documents


Recommended Soldering Techniques