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BCP5616TQ

NPN, 80V, 1A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) <500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The BCP5616TQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Product Type NPN
VCEO, VCES (V) 80 V
IC (A) 1 A
ICM (A) 2 A
PD (W) 2.5 W
hFE (min) 0.15 Min
hFE(@ IC) 0.15 A
hFE(Min 2) 40
hFE(@ IC2) 0.5 A
VCE (SAT)Max (mV) 500 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.5/50
VCE (SAT)(Max.2) N/A mV
VCE (SAT) (@ IC/IB2) (A/mA) N/A
fT (MHz) 150 MHz
RCE(SAT) N/A mΩ

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC