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BAV3004WQ (Not Recommended for new design)

NRND = Not Recommended for New Design


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  • Low Leakage Current: ≤100nA
  • Fast Switching Speed: ≤50ns
  • High Reverse Breakdown Voltage: ≥350V
  • Ideal for Battery-Powered, Portable Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The BAV3004WQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
Configuration Single
CT(pF) Max @ VR = 0V, f = 1MHz 5
ESD Diodes (Y|N) No
Forward Voltage Drop VF @ IF (mA) 1.25V @ 200
Maximum Average Rectifier Current IO (mA) 225
Maximum Peak Forward Surge Current IFSM (A) 4
Maximum ReverseCurrent IR (µA) 0.1
Maximum Reverse Current IR @ VR (V) 240
Peak RepetitiveReverse VoltageVRRM (V) 350
Polarity Cathode Bar
Power Rating (W) 400
Power Rating (mW) 400
AEC Qualified Yes
Reverse Recovery Time trr (ns) 50
TotalCapacitance CT (pF) 5
V(BR)R (V) Min @IR=100?A 350
V(BR)R (V) Min (µA) 350
VF(V) Max @ IF=100mA 1

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Technical Documents

Recommended Soldering Techniques



Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2614 2023-02-23 2023-08-23 Device End of Life (EOL) - Automotive
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility