Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SURFACE MOUNT LOW LEAKAGE DIODE
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| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive supports PPAP) | Automotive |
| Configuration | Single |
| Polarity | Cathode Bar; Anode, Cathode |
| Power Rating (mW) | 375 mW |
| ESD Diodes (Y|N) | No |
| Peak RepetitiveReverse VoltageVRRM (V) | 250 V |
| Reverse Recovery Time trr (ns) | 50 ns |
| Maximum Average Rectifier Current IO (mA) | 200 mA |
| Maximum Peak Forward Surge Current IFSM (A) | 9 A |
| Forward Voltage Drop VF @ IF (mA) | 200 mA |
| Maximum ReverseCurrent IR (µA) | 0.1 µA |
| TotalCapacitance CT (pF) | 5 pF |
| VF(V) Max @ IF=100mA | 1 |
| V(BR)R (V) Min @IR=100?A | 250 |
| Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? | 50 |
| Maximum Reverse Current IR @ VR (V) | 200 V |
| CT(pF) Max @ VR = 0V, f = 1MHz | 5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2545 | 2021-10-05 | 2022-01-05 | Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products |
| PCN-2462 | 2020-05-08 | 2021-04-11 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive) |
