Diodes Incorporated
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DGD2003

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Description

The DGD2003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2003’s high side to switch to 200V in a bootstrap operation.


The DGD2003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. The DGD2003 has a fixed internal deadtime of 420ns (typical).

The DGD2003 is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

Feature(s)

  • Floating High-Side Driver in Bootstrap Operation to 200V
  • Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration
  • 290mA Source/600mA Sink Output Current Capability
  • Outputs Tolerant to Negative Transients
  • Internal Dead Time of 420ns to Protect MOSFETs
  • Wide Low Side Gate Driver Supply Voltage: 10V to 20V
  • Logic Input (HIN and LIN*) 3.3V Capability
  • Schmitt Triggered Logic Inputs
  • Undervoltage Lockout for VCC (Logic and Low Side Supply)
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony free. “Green” Device (Note 3)

Application(s)

  • DC-DC Converters
  • DC-AC Inverters
  • AC-DC Power Supplies
  • Motor Controls
  • Class D Power Amplifiers

Product Specifications

Product Parameters

Offset Voltage Max (V) 200 V
Inputs HIN, LIN*
Output Current IO+ (Typ) (mA) 290 mA
Output Current IO- (Typ) (mA) 600 mA
Internal Deadtime (Typ) 420 ns
tON (Typ) (ns) 680 ns
tOFF (Typ) (ns) 150 ns
tR (Typ) (ns) 70 ns
tF (Typ) (ns) 35 ns

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC