=========================================================================================================
[1N4148WS]
*SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[1N4148WT]
*SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc.
Switching
.MODEL DI_1N4148WT D ( IS=111n RS=0.628 BV=80.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[1N4448HLP]
*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_1N4448HLP D ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n
+ CJO=1.3p M=0.21 VJ=.5 N=1.88 TT=3n )
=========================================================================================================
[1N4448HWS]
*SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n
+ CJO=3.50p M=0.333 N=2.12 TT=5.76n )
=========================================================================================================
[1N4448HWT]
*SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.
Switching
.MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n
+ CJO=3.56p M=0.333 N=1.11 TT=5.76n )
=========================================================================================================
[1N4448W]
*SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc.
.MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u
+ CJO=4.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[1N4448WS]
*SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u
+ CJO=4.00p M=0.333 N=2.12 TT=5.76n )
=========================================================================================================
[BAL99]
*SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u
+ CJO=1.72p M=0.333 N=2.35 TT=5.76n )
=========================================================================================================
[BAS16]
*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching
.MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.60 TT=5.76n )
=========================================================================================================
[BAS16LP]
*SRC=BAS16LP;DI_BAS16LP;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_BAS16LP D ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.35 TT=5.76n )
=========================================================================================================
[BAS16T]
*SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n
************************************************************************************************************************
=========================================================================================================
[BAS16TW]
*SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAS16V]
*SRC=BAS16V;DI_BAS16V;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching diode - one element of device
.MODEL DI_BAS16V D ( IS=412p RS=0.140 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[BAS16W]
*SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAS19]
*SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )
=========================================================================================================
[BAS19W]
*SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )
=========================================================================================================
[BAS20]
*SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )
=========================================================================================================
[BAS20DW]
*SRC=BAS20DW;DI_BAS20DW;Diodes;Si; 200V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS20DW
.MODEL DI_BAS20DW D ( IS=2.86n RS=0.141 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=1.95 TT=72.0n )
=========================================================================================================
[BAS20W]
*SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )
=========================================================================================================
[BAS21]
*SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )
=========================================================================================================
[BAS21DW]
*SRC=BAS21DW;DI_BAS21DW;Diodes;Si; 250V 0.300A 50.0ns Diodes Inc. Single Element of Dual BAS21DW
.MODEL DI_BAS21DW D ( IS=2.86n RS=0.141 BV=250 IBV=100n
+ CJO=2.98p M=0.333 N=1.95 TT=72.0n )
=========================================================================================================
[BAS21T]
*SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
.MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=2.87 TT=72.0n )
=========================================================================================================
[BAS21W]
*SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )
=========================================================================================================
[BAV116W]
*SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode
.MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n
+ CJO=2.40p M=0.333 N=1.67 TT=4.32u )
=========================================================================================================
[BAV16W]
*SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. -
.MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[BAV16WS]
*SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[BAV170]
*SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode
.MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.70 TT=4.32u
=========================================================================================================
[BAV170T]
*SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )
=========================================================================================================
[BAV199]
*SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode
.MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )
=========================================================================================================
[BAV199DW]
*SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc.
Switching - one element of BAV199DW array
.MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )
=========================================================================================================
[BAV199T]
*SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )
=========================================================================================================
[BAV199W]
*SRC=BAV199W;DI_BAV199W;Diodes;Si; 85.0V 0.160A 3.00us Diodes Inc. Switching Diode
.MODEL DI_BAV199W D ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u
+ CJO=2.00 M=0.333 N=1.70 TT=4.32u )
=========================================================================================================
[BAV19W]
*SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. -
.MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV19WS]
*SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV20W]
*SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. -
.MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV20WS]
*SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV21W]
*SRC=BAV21W;DI_BAV21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. -
.MODEL DI_BAV21W D ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV21WS]
*SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
=========================================================================================================
[BAV23A]
*SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
.MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )
=========================================================================================================
[BAV23C]
*SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
.MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )
=========================================================================================================
[BAV23S]
*SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
.MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )
=========================================================================================================
[BAV3004W]
*SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching
.MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n
+ CJO=1.17p M=0.333 N=2.37 TT=72.0n )
=========================================================================================================
[BAV3004WS]
*SRC=BAV3004WS;DI_BAV3004WS;Diodes;Si; 350V 0.225A 50.0ns Diodes, Inc. switching
.MODEL DI_BAV3004W D ( IS=58.9n RS=0.412 BV=350 IBV=100n
+ CJO=1.17p M=0.333 N=2.37 TT=72.0n )
=========================================================================================================
[BAV70]
*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching
.MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[BAV70DW]
*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching
.MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[BAV70T]
*SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )
=========================================================================================================
[BAV70W]
*SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAV756DW]
*SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device
.MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=2.45 TT=5.76n )
=========================================================================================================
[BAV99]
*SRC=BAV99;DI_BAV99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
switching
.MODEL DI_BAV99 D ( IS=261p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=1.19p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[BAV99BRW]
*SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element
.MODEL DI_BAV99BRW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[BAV99T]
*SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )
=========================================================================================================
[BAV99W]
*SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAW156]
*SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode
.MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )
=========================================================================================================
[BAW156T]
*SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
.MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )
=========================================================================================================
[BAW56]
*SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAW567DW]
*SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAW56DW]
*SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[BAW56T]
*SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
Switching Diode - one element of device
.MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )
=========================================================================================================
[BAW56W]
*SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[DLPA006]
*SRC=DLPA006;DI_DLPA006;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc.
Switching - one element of DLPA006 array
.MODEL DI_DLPA006 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )
=========================================================================================================
[MMBD2004S]
*SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching
.MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n
+ CJO=6.63p M=0.333 N=1.70 TT=72.0n )
=========================================================================================================
[MMBD2004SW]
*SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching - one element of device
.MODEL DI_MMBD2004SW D ( IS=1.76u RS=0.187 BV=240 IBV=100n
+ CJO=6.63p M=0.333 N=1.70 TT=72.0n )
=========================================================================================================
[MMBD3004A]
*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching
D1 1 = A 2 = C DI_MMBD3004A
.MODEL DI_MMBD3004A D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m
=========================================================================================================
[MMBD3004BRM]
*SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM
D1 1 = A 2 = C DI_MMBD3004BRM
.MODEL DI_MMBD3004BRM D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m
=========================================================================================================
[MMBD3004C]
*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching
D1 1 = A 2 = C DI_MMBD3004C
.MODEL DI_MMBD3004C D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m
=========================================================================================================
[MMBD3004S]
*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching
D1 1 = A 2 = C DI_MMBD3004S
.MODEL DI_MMBD3004S D
+ IS = 5.000n
+ N = 1.930
+ BV = 300.0
+ IBV = 100.0n
+ RS = 730.0m
+ CJO = 979.0f
+ M = 43.5m
+ TT = 72.0n
+ VJ = 390.5m
=========================================================================================================
[MMBD4148]
*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )
=========================================================================================================
[MMBD4148PLM]
*SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si; 75.0V 0.300A 4.00ns DIODES Inc
.MODEL MMBD4148PLM D ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.00 M=0.333 N=4.97 TT=5.76n )
=========================================================================================================
[MMBD4148W]
*SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[MMBD4448]
*SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )
=========================================================================================================
[MMBD4448H]
*SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )
=========================================================================================================
[MMBD4448HADW]
*SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
=========================================================================================================
[MMBD4448HAQW]
*SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
=========================================================================================================
[MMBD4448HCQW]
*SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
=========================================================================================================
[MMBD4448HSDW]
*SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
=========================================================================================================
[MMBD4448HT]
**********************************************************************************************************************************************
*SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching
.MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
********************************************************************************************************************************************
=========================================================================================================
[MMBD4448HTA]
**********************************************************************************************************************************************
*SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************
=========================================================================================================
[MMBD4448HTC]
**********************************************************************************************************************************************
*SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************
=========================================================================================================
[MMBD4448HTS]
**********************************************************************************************************************************************
*SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
**********************************************************************************************************************************************
=========================================================================================================
[MMBD4448HTW]
*SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of three
.MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
=========================================================================================================
[MMBD4448HW]
*SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=2.37 TT=5.76n )
=========================================================================================================
[MMBD4448V]
*SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching - one element of device
.MODEL DI_MMBD4448V D ( IS=4.77n RS=84.4m BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )
=========================================================================================================
[MMBD4448W]
*SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[MMBD7000]
*SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc.
.MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u
+ CJO=2.00p M=0.333 N=2.03 TT=5.76u )
=========================================================================================================
[MMBD914]
*SRC=MMBD914;DI_MMBD914;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching
.MODEL DI_MMBD914 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.60 TT=5.76n )
=========================================================================================================
[SDA006]
*SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Databus Transient Suppressor - Model is for one Diode Element
.MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
=========================================================================================================
[DLPA004]
*SRC=DLPA004;DLPA004;Diodes;Si; 85.0V 0.300A 3.00us DIODES Switching Diodes
.MODEL DLPA004 D ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=4.32u )
=========================================================================================================
[MMBD7000HS]
*SRC=MMBD7000HS;MMBD7000HS;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode
.MODEL MMBD7000HS D ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[MMBD7000HC]
*SRC=MMBD7000HC;MMBD7000HC;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching Diode
.MODEL MMBD7000HC D ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[MMBD5004BRM]
*SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si; 400V 1.25A 50.0ns DIODES Switching diodes
.MODEL MMBD5004BRM D ( IS=128n RS=33.6m BV=400 IBV=5.00u
+ CJO=2.00p M=0.333 N=2.62 TT=72.0n )
=========================================================================================================
[BAS521]
*SRC=BAS521;BAS521;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode
.MODEL BAS521 D ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=810f M=0.333 N=2.41 TT=72.0n )
=========================================================================================================
[BAS521LP]
*SRC=BAS521LP;BAS521LP;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode
.MODEL BAS521LP D ( IS=74.8n RS=0.288 BV=325 IBV=150n
+ CJO=810f M=0.333 N=2.41 TT=72.0n )
=========================================================================================================
[BAW101S]
*SRC=BAW101S;BAW101S;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode
.MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=700f M=0.333 N=2.41 TT=72.0n )
=========================================================================================================
[BAW101V]
*SRC=BAW101V;BAW101V;Diodes;Si; 325V 0.250A 50.0ns DIODES Switching Diode
.MODEL BAW101V D ( IS=74.8n RS=0.288 BV=325 IBV=150n
+ CJO=700f M=0.333 N=2.41 TT=72.0n )
=========================================================================================================
[MMBD5004S]
*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_MMBD5004ACS
.MODEL DI_MMBD5004ACS D
+ IS = 10n
+ N = 2.02
+ BV = 400
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.6p
+ VJ = 60m
+ M = 35m
+ FC = 0.5
+ TT = 50n
=========================================================================================================
[MMBD5004A]
*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_MMBD5004ACS
.MODEL DI_MMBD5004ACS D
+ IS = 10n
+ N = 2.02
+ BV = 400
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.6p
+ VJ = 60m
+ M = 35m
+ FC = 0.5
+ TT = 50n
=========================================================================================================
[MMBD5004C]
*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_MMBD5004ACS
.MODEL DI_MMBD5004ACS D
+ IS = 10n
+ N = 2.02
+ BV = 400
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.6p
+ VJ = 60m
+ M = 35m
+ FC = 0.5
+ TT = 50n
=========================================================================================================
[BAV5004LP]
*SRC=BAV5004LP; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_BAV5004LP
.MODEL DI_BAV5004LP D
+ IS = 10n
+ N = 2.15
+ BV = 400
+ IBV = 1.00u
+ RS = 0.6
+ CJO = 0.90p
+ VJ = 55m
+ M = 28m
+ FC = 0.5
+ TT = 50n
=========================================================================================================
[1SS361UDJ]
*SRC=1SS361UDJ; 80V 0.3A 4.0ns Diodes Inc. Switching Diode
D1 1 = A 2 = C DI_1SS361UDJ
.MODEL DI_1SS361UDJ D
+ IS = 2.0n
+ N = 1.83
+ BV = 80
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.71p
+ VJ = 5m
+ M = 9m
+ FC = 0.5
+ TT = 4n
=========================================================================================================
[1N4148W]
*SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
.MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[BAV99DW]
*SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element
.MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )
=========================================================================================================
[DLLFSD01LP3]
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=2/07/2015
*VERSION=1
*
.MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u
+ EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n)
* (c) 2015 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
=========================================================================================================
[1N4148WQ]
*SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
.MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[1N4148WSQ]
*SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
Switching Diode
.MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )
=========================================================================================================
[BAS116]
*SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc.
Switching Diode
.MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n
+ CJO=1.72p M=0.333 N=4.07 TT=4.32u )
=========================================================================================================
[BAS116T]
*SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode
.MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )
=========================================================================================================
[BAS116LP3]
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=13/11/2013
*VERSION=1
.model BAS116LP3 D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m
+ BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m)
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
=========================================================================================================
[BAS116UDJ]
*SRC=BAS116UDJ; 400V 0.3A 50.0ns Diodes Inc. Switching Diode
D1 1 = A 2 = C DI_BAS116UDJ
.MODEL DI_BAS116UDJ D
+ IS = 1.1p
+ N = 1.42
+ BV = 400
+ IBV = 1.00u
+ RS = 0.350
+ CJO = 1.95p
+ VJ = 60m
+ M = 173m
+ FC = 0.5
+ TT = 50n
=========================================================================================================
[BAS16HLP]
*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode
.MODEL DI_1N4448HLP D ( IS=5.31n RS=0.761 BV=80.0 IBV=100n
+ CJO=3.56p M=0.333 N=1.90 TT=5.76n )
=========================================================================================================