========================================================================================================= [CTA2N1P] ******************************************************************************************************************************* *SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_CTA2N1P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ========================================================================================================= [CTA2P1N] ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ----------------------------------------------------------------------------------------------------------------------------------------------------------------- ========================================================================================================= [LMN200B01] ******************************************************************************************************************************* *SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B01P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- ========================================================================================================= [LMN200B02] ******************************************************************************************************************************* *SRC=LMN200B02;DI_LMN200B02_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_LMN200B02_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ---------------------------------------------------------- =========================================================================================================