*---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *---------- DMN26D0UDJ Spice Model ---------- .SUBCKT DMN26D0UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMNDMN26D0UDJ Spice Model v1.0 Last Revised 2011/1/7 *---------- DMN2005K Spice Model ---------- .SUBCKT DMN2005K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005K Spice Model v1.0 Last Revised 2011/11/15 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=24JAN2011 *VERSION=1 *PIN_ORDER *1=S1 *2=G1 *3=S2 *4=G2 *5=D2 *6=D2 *7=D1 *8=D1 * .SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8 *Dev1 N-channel M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46 M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22 RG11 2 16 5 RIN11 12 13 1E12 RD11 11 15 Rmod11 0.036 RS11 13 14 1E-6 RL11 13 15 3E9 C11 12 13 8.5E-12 C12 12 15 3E-12 Egt11 16 12 17 13 1 Vgt11 13 18 1 Igt11 13 17 1 Rgt11 17 18 Rmod12 1 D11 13 15 Dmod1 RP11 15 7 1E-6 RP12 15 8 1E-6 LS11 14 1 1.2E-9 *Dev2 N-channel M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46 M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22 RG21 4 26 5 RIN21 22 23 1E12 RD21 21 25 Rmod11 0.036 RS21 23 24 1E-6 RL21 23 25 3E9 C21 22 23 8.5E-12 C22 22 25 3E-12 Egt21 26 22 27 23 1 Vgt21 23 28 1 Igt21 23 27 1 Rgt21 27 28 Rmod12 1 D21 23 25 Dmod1 RP21 25 5 1E-6 RP22 25 6 1E-6 LS21 24 3 1.2E-9 .MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod12 RES (TC1=-3e-4 TC2=0) .ENDS * *$ *---------- DMG1024UV Spice Model ---------- .SUBCKT DMG1024UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.2635 RS 30 3 0.001 RG 20 2 93 CGS 2 3 5.63E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 4.147E+004 ETA = 0.00355 VTO = 0.9014 + TOX = 1.68E-008 NSUB = 3.755E+015 KP = 4.794 KAPPA = 1E-015 U0 = 4.441E-010 .MODEL DCGD D CJO = 2.806E-011 VJ = 0.04974 M = 0.2926 .MODEL DSUB D IS = 2.941E-010 N = 1.586 RS = 0.07503 BV = 22 CJO = 1.491E-011 VJ = 0.219 M = 0.277 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG1024UV Spice Model v1.0 Last Revised 2010/10/4 *---------- DMG5802LFX Spice Model ---------- .SUBCKT DMG5802LFX 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01074 RS 30 3 0.001 RG 20 2 1.47 CGS 2 3 9.956E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.9E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 3.802E+005 ETA = 1E-006 VTO = 1.016 + TOX = 6E-008 NSUB = 1E+016 KP = 94.75 KAPPA = 7.017 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 1.268E-009 N = 1.142 RS = 0.02111 BV = 30 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG5802LFX Spice Model v1.0 Last Revised 2011/6/27 *---------- DMN2004DMK Spice Model ---------- .SUBCKT DMN2004DMK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DMK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2040LTS Spice Model ---------- .SUBCKT DMN2040LTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2040LTS Spice Model v1.0 Last Revised 2010/11/18 *---------- DMN2400UV Spice Model ---------- .SUBCKT DMN2400UV 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UV Spice Model v1.0 Last Revised 2011/10/27 *---------- DMG3420U Spice Model ---------- .SUBCKT DMG3420U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.02158 RS 30 3 0.001 RG 20 2 1.53 CGS 2 3 3.785E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.25E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.009674 VTO = 1.32 + TOX = 6E-008 NSUB = 1E+016 KP = 53.82 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 3.069E-010 VJ = 0.1752 M = 0.4052 .MODEL DSUB D IS = 8.863E-010 N = 1.372 RS = 0.01813 BV = 22 CJO = 4.022E-011 VJ = 0.2305 M = 0.4418 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3420U Spice Model v1.0 Last Revised 2010/5/9 *---------- DMG8601UFG Spice Model ---------- .SUBCKT DMG8601UFG 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG8601UFG Spice Model v1.0 Last Revised 2011/5/5 *---------- DMN2004K Spice Model ---------- .SUBCKT DMN2004K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004K Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004WK Spice Model ---------- .SUBCKT DMN2004WK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004WK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2005DLP4K Spice Model ---------- .SUBCKT DMN2005DLP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005DLP4K Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2005LP4K Spice Model ---------- .SUBCKT DMN2005LP4K 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DDMN2005LP4K Spice Model v1.0 Last Revised 2011/11/15 *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *---------- DMG3414U Spice Model ---------- .SUBCKT DMG3414U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01338 RS 30 3 1E-003 RG 20 2 18 CGS 2 3 7.702E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.1E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 5.027E-008 VTO = 0.8394 + TOX = 6E-008 NSUB = 1E+016 KP = 46.34 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 4.271E-010 N = 1.076 RS = 0.05217 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG3414U Spice Model v1.0 Last Revised 2011/7/7 *SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 33.7 CGS 2 3 119p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 226p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=226p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=176p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMG6968UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 10.9m RS 40 3 1.62m RG 20 2 40.7 CGS 2 3 114p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 204p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=0.900 KP=31.8 .MODEL DCGD D (CJO=204p VJ=0.600 M=0.680 .MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0 + CJO=134p VJ=0.800 M=0.420 TT=247n .MODEL DLIM D (IS=100U) .ENDS *---------- DMG6968UTS Spice Model ---------- .SUBCKT DMG6968UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01441 RS 30 3 0.001 RG 20 2 202.6 CGS 2 3 1.466E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1E-009 R1 13 30 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1.361E+005 ETA = 0.001 VTO = 0.8913 + TOX = 6E-008 NSUB = 1E+016 KP = 97.33 KAPPA = 1 U0 = 400 .MODEL DCGD D CJO = 2.802E-010 VJ = 0.2313 M = 0.4878 .MODEL DSUB D IS = 2.098E-009 N = 1.133 RS = 0.02894 BV = 25 CJO = 2.541E-010 VJ = 0.1292 M = 0.32 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMG6968UTS Spice Model v1.0 Last Revised 2011/5/5 *---------- DMN2004DWK Spice Model ---------- .SUBCKT DMN2004DWK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004DWK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004TK Spice Model ---------- .SUBCKT DMN2004TK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004TK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2004VK Spice Model ---------- .SUBCKT DMN2004VK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2004VK Spice Model v1.0 Last Revised 2011/10/27 *---------- DMN2005LPK Spice Model ---------- .SUBCKT DMN2005LPK 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2005LPK Spice Model v1.0 Last Revised 2011/11/15 *---------- DMN2016UTS Spice Model ---------- .SUBCKT DMN2016UTS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01185 RS 30 3 0.001 RG 20 2 1.42 CGS 2 3 1.392E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85E-009 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01011 VTO = 1.042 + TOX = 6E-008 NSUB = 1E+016 KP = 143.4 KAPPA = 20.85 U0 = 400 .MODEL DCGD D CJO = 6.156E-010 VJ = 0.1767 M = 0.3617 .MODEL DSUB D IS = 7.1E-010 N = 1.3 RS = 0.01232 BV = 25 CJO = 7.957E-011 VJ = 0.3347 M = 0.4933 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2016UTS Spice Model v1.0 Last Revised 2011/1/31 *SYM=POWMOSN .SUBCKT DMN2020LSN D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=1943.229m RD 10 1 5m RS 30 3 4m RG 20 2 1.5 CGS 2 3 952p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 550p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16 .MODEL DCGD D CJO=550p VJ=0.350 M=0.410 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=116p VJ=0.120 M=0.380 .MODEL DLIM D IS=100U .ENDS *---------- DMN2041LSD Spice Model ---------- .SUBCKT DMN2041LSD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01312 RS 30 3 0.001002 RG 20 2 1.37 CGS 2 3 4.74E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.0001 VTO = 1.023 + TOX = 6E-008 NSUB = 1.901E+016 KP = 50 KAPPA = 30.04 U0 = 400 .MODEL DCGD D CJO = 4.457E-010 VJ = 0.2472 M = 0.4558 .MODEL DSUB D IS = 2.93E-009 N = 1.251 RS = 0.02983 BV = 25 CJO = 3.405E-011 VJ = 0.2561 M = 0.4362 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2041LSD Spice Model v1.0 Last Revised 2010/11/18 *DIODES_INC_SPICE_MODEL DMN2300UFB4 N-channel MOSFET *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=30JUL2012 *VERSION=2 .SUBCKT DMN2300UFB4 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 130E-3 RS 23 3 Rmod1 10E-3 RG 20 22 50 RIN 20 23 2E11 RDS 10 23 6E9 CGS 2 3 140E-12 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 140E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 0.022 LS 30 23 1n .MODEL Nmod1 NMOS (LEVEL=3 VTO=.9095 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-15 N=10) .MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25) .MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=22 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9 TRS1=2E-3) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6) .ENDS .SIMULATOR DEFAULT *---------- DMN2400UFB4 Spice Model ---------- .SUBCKT DMN2400UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFB4 Spice Model v1.0 Last Revised 2011/10/27 *SYM=POWMOSN .SUBCKT DMG9926UDM D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *SYM=POWMOSN .SUBCKT DMG9926USD D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.5 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB ********************************************* .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 ********************************************* .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 ********************************************* .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=28p VJ=0.800 M=0.420 ********************************************* .MODEL DLIM D IS=100U ********************************************* .ENDS *SRC=DMN2009LSS;DI_DMN2009LSS;MOSFETs N;Enh;20.0V 12.0A 8.00mohms Diodes Inc. MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2009LSS 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 2.80m RS 40 3 1.20m RG 20 2 12.5 CGS 2 3 2.46n EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 663p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m + ETA=2.00m VTO=3.00 KP=274 .MODEL DCGD D (CJO=663p VJ=0.600 M=0.680 .MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0 + CJO=1.28n VJ=0.800 M=0.420 TT=297n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2050L 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 12.8m RS 40 3 1.72m RG 20 2 25.4 CGS 2 3 415p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 825p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=1.83m VTO=1.40 KP=75.8 .MODEL DCGD D (CJO=825p VJ=0.600 M=0.680 .MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0 + CJO=215p VJ=0.800 M=0.420 TT=234n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2075U;DI_DMN2075U;MOSFETs N;Enh;20.0V 4.20A 38.0mohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2075U 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 17.0m RS 40 3 1.95m RG 20 2 35.7 CGS 2 3 536p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 409p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=117 .MODEL DCGD D (CJO=409p VJ=0.600 M=0.680 .MODEL DSUB D (IS=17.4n N=1.50 RS=59.5m BV=20.0 + CJO=97.0p VJ=0.800 M=0.420 TT=217n .MODEL DLIM D (IS=100U) .ENDS *SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms Diodes Inc MOSFET *SYM=POWMOSN .SUBCKT DI_DMN2215UDM 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 46.5m RS 40 3 3.50m RG 20 2 75.0 CGS 2 3 158p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 211p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 7.50n .MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m + ETA=2.00m VTO=1.00 KP=25.9Meg .MODEL DCGD D (CJO=211p VJ=0.600 M=0.680 .MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0 + CJO=65.6p VJ=0.800 M=0.420 TT=174n .MODEL DLIM D (IS=100U) .ENDS *---------- DMN26D0UFB4 Spice Model ---------- .SUBCKT DMN26D0UFB4 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UFB4 Spice Model v1.0 Last Revised 2011/1/10 *---------- DMN26D0UT Spice Model ---------- .SUBCKT DMN26D0UT 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 1 RS 30 3 0.001 RG 20 2 1.37 CGS 2 3 1.2E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 9E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 5.039E+004 ETA = 0.0001 VTO = 0.6781 +TOX = 6E-008 NSUB = 1E+015 KP = 0.5796 KAPPA = 1E-015 U0 = 400 .MODEL DCGD D CJO = 5.649E-012 VJ = 0.1656 M = 0.2556 .MODEL DSUB D IS = 1E-006 N = 2.736 RS = 0.6505 BV = 22 CJO = 3.516E-012 VJ = 0.7721 M = 0.3577 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN26D0UT Spice Model v1.0 Last Revised 2011/1/10 * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG_GM *SIMULATOR=PSPICE *DATE=08/12/2009 *VERSION=2 *PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1 * .SUBCKT ZXMD63N02X 1 2 3 4 5 6 7 8 * Device1 M11 13 12 11 11 Mmod1 R11 12 2 18 R21 13 11 1E9 C11 12 11 700E-12 C21 13 12 50E-12 D11 11 13 Dmod1 L11 11 1 1E-9 L21 13 14 1E-9 R31 14 7 1E-3 R41 14 8 1E-3 * Device2 M12 23 22 21 21 Mmod1 R12 22 4 18 R22 23 21 1E9 C12 22 21 700E-12 C22 23 22 50E-12 D12 21 23 Dmod1 L12 21 3 1E-9 L22 23 24 1E-9 R32 24 5 1E-3 R42 24 6 1E-3 .MODEL Mmod1 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15 +CBD=600E-12 LAMBDA=8.7E-3 .MODEL Dmod1 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3 .ENDS * *$ * *Zetex ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A01F 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod L=1.16E-6 W=0.46 M2 5 20 5 6 Pmod L=1.3E-6 W=0.22 RG 4 2 5 RIN 2 5 1E12 RD 3 6 Rmod1 0.036 RL 3 5 3E9 C1 2 5 8.5E-12 C2 3 4 3E-12 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31 +KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3 +CJO=230e-12 BV=23) .MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5) .MODEL Rmod2 RES (TC1=-3e-4 TC2=0) .ENDS ZXMN2A01F * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05 * .SUBCKT ZXMN2A03E6 30 40 50 *------connections-------D-G-S M1 6 20 5 5 Nmod M2 5 20 5 6 Pmod RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rmod1 0.04 RL 3 5 3E9 C1 2 5 1.5E-10 C2 3 4 2.5E-10 D1 5 3 Dbodymod Egt1 2 20 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1.45 LD 3 30 0.3E-9 LG 4 40 1.9E-9 LS 5 50 1.9E-9 .MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929) +VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01) .MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373) .MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1) .MODEL Rmod1 RES (TC1=0 TC2=0) .MODEL Rmod2 RES (TC1=3E-4 TC2=1E-7) .ENDS ZXMN2A03E6 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=22/02/2005 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMN2A14F 30 40 50 M1 6 20 5 5 Nmod L=1.16E-6 W=0.74 M2 5 20 5 6 Pmod L=1.3E-6 W=0.45 RG 4 2 3.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E12 C1 2 5 8.5E-12 C2 3 4 3.5E-12 D1 5 3 Dmod1 Egt1 20 2 21 5 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 Rmod2 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=5E16 +VTO=1.25 KP=10E-5 RS=.027 NFS=1E9 KAPPA=0.06 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=3.3E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-10 RS=.054 IKF=0.04 TRS1=1.5e-3 +CJO=600e-12 BV=23) .MODEL Rmod1 RES (TC1=8.2e-3 TC2=2.3E-5) .MODEL Rmod2 RES (TC1=-3E-4 TC2=0E-6) .ENDS ZXMN2A14F * *$ * *Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07 * .SUBCKT ZXMN2B03E6 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=1.83 M2 5 2 5 6 Pmod L=1.2E-6 W=0.67 RG 4 22 1.5 RIN 2 5 1E12 RD 3 6 Rmod1 0.015 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8 +KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6) .ENDS ZXMN2B03E6 * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07 * .SUBCKT ZXMN2B14FH 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1E-6 W=1.1 M2 5 2 5 6 Pmod L=1E-6 W=0.55 RG 4 22 2.8 RIN 2 5 1E12 RD 3 6 Rmod1 0.03 RL 3 5 3E9 C1 2 5 300E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84 +KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8 +CJO=200e-12 BV=23) .MODEL Rmod1 RES (TC1=4.2e-3 TC2=0.8E-5) .MODEL Rmod2 RES (TC1=-0.9e-3 TC2=0E-5) .ENDS ZXMN2B14FH * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08 * .SUBCKT ZXMN2F34FH 3 4 5 *------connections-------D-G-S M1 6 20 8 8 Nmod RG 4 2 7 RD 3 6 Rmod1 0.025 RS 8 5 Rmod1 0.0033 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 200E-12 C2 2 3 40E-12 C3 15 14 270E-12 C4 16 8 230E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4 BV=22) .MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6) .ENDS ZXMN2F34FH * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *SYM=POWMOSN .SUBCKT DMN2075 D=10 G=20 S=30 * TERMINALS: D G S M1 1 2 3 3 NMOS L=0.6U W=0.8625 RD 10 1 16m RS 30 3 4m RG 20 2 1.24 CGS 2 3 872p EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 408p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16 .MODEL DCGD D CJO=448p VJ=0.450 M=0.550 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0 + CJO=28p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms Diodes Inc MOSFET .MODEL DI_DMN2230U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24 + PHI=.75 LAMBDA=127u RD=15.4m RS=15.4m + IS=1.00p PB=0.800 MJ=0.460 CBD=46.4p + CBS=55.6p CGSO=360n CGDO=300n CGBO=1.22u ) * -- Assumes default L=100U W=100U -- * *ZETEX ZXM64N02X Spice Model v1.0 Last revision 10/01/2005 * .SUBCKT ZXM64N02X 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 1.7 RIN 2 8 200E6 RD 3 6 RDSMOD 0.02 RS 8 5 RDSMOD 0.004 RL 3 5 35E6 C1 2 8 1000E-12 C2 2 3 130E-12 C3 15 14 1150E-12 C4 16 8 1100E-12 D1 5 3 DMOD1 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 20 2 5 21 1 Vgt1 5 22 1 Igt1 5 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35 .MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1.5 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5) .MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6) .ENDS ZXM64N02X * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc ("Zetex"). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05 * .SUBCKT ZXMN2A02N8 30 40 50 *---connections---D-G-S M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.3E-9 LG 4 40 1.2E-9 LS 5 50 1.2E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *DIODES_INC_SPICE_MODEL *ORIGIN=DZSL_DPG *SIMULATOR=PSPICE *DATE=22/02/2005 *VERSION=2 *PIN_ORDER D G S * .SUBCKT ZXMN2A02X8 30 40 50 M1 6 2 7 7 Nmod L=1.16E-6 W=2.3 M2 7 2 7 6 Pmod L=1.3E-6 W=1.3 RG 4 2 1 RIN 2 5 1E12 RD 3 6 Rdmod 0.0045 RS 7 5 Rdmod 0.01 RL 3 5 3E9 C1 2 5 10E-12 C2 3 2 5E-12 D1 5 3 Dbodymod LD 3 30 1.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16 +VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9 +CJO=450e-12 BV=22) .MODEL Rdmod RES (TC1=3e-3 TC2=6E-6) .ENDS * *$ * *Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07 * .SUBCKT ZXMN2B01F 30 40 50 *------connections-------D-G-S M1 6 2 5 5 Nmod L=1.16E-6 W=0.55 M2 5 2 5 6 Pmod L=1.2E-6 W=0.22 RG 4 22 4.2 RIN 2 5 1E12 RD 3 6 Rmod1 0.05 RL 3 5 3E9 C1 2 5 10E-12 C2 3 4 3E-12 D1 5 3 Dmod1 Rt 5 61 Rmod2 1 Vt 61 62 1 It 5 62 1 Et 2 22 62 5 1 LD 3 30 0.5E-9 LG 4 40 1.0E-9 LS 5 50 1.0E-9 .MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66 +KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10) .MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16 +TPG=-1 IS=1E-15 N=10) .MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8 +CJO=115e-12 BV=23) .MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5) .MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5) .ENDS ZXMN2B01F * *$ * * (c) 2007 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *Zetex ZXMN2F34MA Spice Model v1.0 Last Revised 31/07/08 * .SUBCKT ZXMN2F34MA 3 4 5 *------connections-------D-G-S M1 6 20 8 8 Nmod RG 4 2 7 RD 3 6 Rmod1 0.025 RS 8 5 Rmod1 0.0033 RL 3 5 100E6 D1 5 3 Dmod1 I1 8 21 1 V1 22 21 1 RT 22 8 Rmod2 1 Et 2 20 21 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 C1 2 8 200E-12 C2 2 3 40E-12 C3 15 14 270E-12 C4 16 8 230E-12 S1 2 15 14 13 SMOD1 S2 13 15 14 13 SMOD2 S3 16 13 13 8 SMOD3 S4 16 2 13 8 SMOD4 .MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5 .MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5 .MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3 .MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2 .MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSUB=1E16 IS=1E-15 N=10) .MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4 BV=22) .MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5) .MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6) .ENDS ZXMN2F34MA * *$ * * (c) 2008 Diodes Incorporated * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Diodes "). They are supplied * free of charge by Diodes for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA *DIODES_INC_SPICE_MODEL DMN2065UW *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=17Apr2013 *VERSION=1 *PINS 10=D 20=G 30=S .SUBCKT DMN2065UW 10 20 30 M1 1 2 3 3 Nmod1 RD 10 1 Rmod1 33E-3 RS 23 3 Rmod1 15E-3 RG 20 22 8 RIN 20 23 2E11 RDS 10 23 2E9 CGS 2 3 220E-12 EGD 12 0 2 1 1 *REGD 12 0 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 760E-12 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 23 10 DSUB EL 2 22 1 3 .003 RL 30 23 3 LS 30 23 2E-9 .MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15 N=10) .MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25) .MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9) .MODEL DLIM D (IS=100U N=1 T_ABS=25) .MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6) .ENDS .SIMULATOR DEFAULT * (c) 2013 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Diodes Incorporated, its distributors * or agents. * * Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL * *SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2112SN NMOS( LEVEL=1 VTO=1.20 KP=35.3 GAMMA=1.49 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=1.21u ) * -- Assumes default L=100U W=100U -- *SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSFET .MODEL DI_DMN2114SN NMOS( LEVEL=1 VTO=1.40 KP=21.8 GAMMA=1.74 + PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m + IS=600f PB=0.800 MJ=0.460 CBD=248p + CBS=298p CGSO=540n CGDO=450n CGBO=810n ) * -- Assumes default L=100U W=100U -- *---------- DMN2990UDJ Spice Model ---------- .SUBCKT DMN2990UDJ 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UDJ Spice Model v1.0 Last Revised 2011/8/12 * *ZETEX ZXMN61N02F Spice Model v1.0 Last Revised 24/2/04 * .SUBCKT ZXM61N02F 3 4 5 *----connections----D-G-S * M1 6 20 8 8 MOSMOD M2 6 20 8 8 MOSMODS RG 4 2 6 RIN 2 8 200E6 RD 3 6 RMOD1 0.03 RS 8 5 RMOD1 0.0225 RL 3 5 35E6 C1 2 8 158E-12 C3 15 14 175E-12 C4 16 8 183E-12 D1 5 3 DMOD1 D2 17 3 DMOD2 S1 2 15 14 13 SMOD1a S2 13 15 14 13 SMOD1b S3 16 13 13 8 SMOD2a S4 16 2 13 8 SMOD2b Egs1 2 17 2 8 1 Egs2 13 8 2 8 1 Eds1 14 8 3 8 1 Egt1 2 20 21 8 -1 Vgt1 8 22 1 Igt1 8 21 1 Rgt 21 22 RMOD2 1 .MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3 .MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055 .MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9 .MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10 .MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75 .MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75 .MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5 .MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5 .MODEL RMOD1 RES (TC1=2.5E-3 TC2=1.8E-5) .MODEL RMOD2 RES (TC1=3.3E-3 TC2=1.5E-6) .ENDS ZXM61N02F * *$ * * (c) 2006 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex Semiconductors plc (" Zetex "). They are supplied * free of charge by Zetex for the purpose of research and design * and may be used or copied intact (including this notice) for * that purpose only. All other rights are reserved. The models * are believed accurate but no condition or warranty as to their * merchantability or fitness for purpose is given and no liability * in respect of any use is accepted by Zetex PLC, its distributors * or agents. * * Zetex Semiconductors plc, Zetex Technology Park, Chadderton, * Oldham, United Kingdom, OL9 9LL. *SYM=POWMOSN .SUBCKT DMG1012T D=10 G=20 S=30 * TERMINALS: D G S M1 1 20 3 3 NMOS L=0.6U W=47.66m RD 10 1 220m RS 30 3 80m CGS 20 3 57p EGD 12 0 20 1 1 VFB 14 0 0 FFB 20 1 VFB 1 CGD 13 14 27p R1 13 0 1.00 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1.00 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k + ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16 .MODEL DCGD D CJO=27p VJ=80m M=0.320 .MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20 + CJO=14p VJ=0.800 M=0.420 .MODEL DLIM D IS=100U .ENDS *---------- DMN2013UFDE Spice Model ---------- .SUBCKT DMN2013UFDE 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.004603 RS 30 3 0.001 RG 20 2 1.2 CGS 2 3 2.216E-009 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.5E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.8713 + TOX = 6E-008 NSUB = 1E+016 KP = 164.4 U0 = 400 KAPPA = 100.2 .MODEL DCGD D CJO = 1.628E-009 VJ = 0.1391 M = 0.4287 .MODEL DSUB D IS = 1.129E-009 N = 1.069 RS = 0.01726 BV = 65 + CJO = 3.241E-012 VJ = 0.2008 M = 0.2 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2013UFDE Spice Model v1.0 Last Revised 2013/1/31 *---------- DMN21D2UFB Spice Model ---------- .SUBCKT DMN21D2UFB 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3846 RS 30 3 0.001 RG 20 2 200 CGS 2 3 2.452E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9675 + TOX = 6E-008 NSUB = 1E+016 KP = 2.2 U0 = 400 KAPPA = 38 .MODEL DCGD D CJO = 1.4E-011 VJ = 0.207 M = 0.3876 .MODEL DSUB D IS = 2.291E-010 N = 1.262 RS = 1.472 + BV = 65 CJO = 3.241E-012 VJ = 0.2008 M = 0.2 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN21D2UFB Spice Model v1.0 Last Revised 2012/5/3 *---------- DMN2990UFA Spice Model ---------- *NMOS .SUBCKT DMN2990UFA 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.3743 RS 30 3 0.001 RG 20 2 113 CGS 2 3 2.5E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 8E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716 + TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7 .MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429 .MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ = 0.2048 M = 0.1841 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30 *---------- DMN2400UFD Spice Model ---------- .SUBCKT DMN2400UFD 10 20 30 * TERMINALS: D G S M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.1925 RS 30 3 0.001 RG 20 2 68 CGS 2 3 3.272E-011 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.7E-011 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058 + TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35 .MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101 .MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ = 0.1753 M = 0.2672 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes DMN2400UFD Spice Model v1.0 Last Revised 2012/11/28