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DMP2100UCB9

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RD1D2(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features and Benefits

• Low Qg & Qgd
• Dual PMOS in common-source configuration
• Small Footprint 1.5-mm × 1.5-mm
• Gate ESD Protection to 3kV
• Lead Free By Design/RoHS Compliant
• Halogen and Antimony Free "Green" Device
• Qualified to AEC-Q101 Standards for High Reliability

Applications

• Battery Management
• Load Switch
• Battery Protection
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Product Overview Specs

Part Number DMP2100UCB9
ESD Diode
Y/N
Y
VDS
V
20
VGS
±V
6
IDS
@TA = 25ºC
A
-4
PD
@TA = 25ºC
W
0.8
RDS(on) Max (mΩ) @ VGS 10V
RDS(on) Max (mΩ) @ VGS 4.5V 100
RDS(on) Max (mΩ) @ VGS 2.5V 130
RDS(on) Max (mΩ) @ VGS 1.8V
VGS(th) Max
V
-0.9
Ciss typ.
@VDS = -10V
pF
232
Qg typ
@VGS = 4.5V
nC
3.3

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Distributor Stock Information / Buy Now


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Package Outline Information

  • U-WLB1515-9
U-WLB1515-9
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