DMG7702SFG

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DMG7702SFG
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Description

This MOSFET has been designed to minimize the on-state resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features and Benefits

• DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
- Low R_DS(ON) – minimize conduction losses
- Low V_SD – reducing the losses due to body diode conduction
- Low Q_rr – lower Q_rr of the integrated Schottky reduces body diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies
• Small form factor thermally efficient package enables higher density end products
• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
• Lead Free/RoHS Compliant
• "Green" Device, Halogen and Antimony Free
• Qualified to AEC-Q101 Standards for High Reliability

Applications

• Backlighting
• Power Management Functions
• DC-DC Converters

Part Number	DMG7702SFG
Config/ Polarity	N Channel
ESD Diode Y/N	N
VDS V	30
VGS ±V	20
IDS @TA = 25ºC A	16
PD @TA = 25ºC W	0.89
RDS(on) Max (mΩ) @ VGS 10V	10
RDS(on) Max (mΩ) @ VGS 4.5V	15
CISS typ. @VDS = 15V pF	1296
Qg typ. @VGS = 10V pF	31.6

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