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Home Product Catalog Discrete MOSFETs DIOFET (Diodes Schottky Integrated MOSFET) DMG4932LSD

DMG4932LSD

ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET


Environment Reports

RoHS CofC Download

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Features and Benefits

DIOFET utilises a unique patented process to monolithically integrate a
MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) - minimizes conduction losses
• Low VSD - reducing the losses due to body diode conduction
• Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses
• Low gate capacitance (Qg/Qgs) ratio - reduces risk of shoot through or cross conduction currents at high frequencies
• Avalanche rugged - IAR and EAR rated
• Lead Free, RoHS Compliant
• "Green" Device
• Qualified to AEC-Q101 Standards for High Reliability
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Product Overview Specs

Part Number DMG4932LSD
Config/
Polarity		 Dual N Channel
ESD Diode
Y/N		 N
VDS
V		 30
VGS
±V		 12
25
IDS
@TA = 25ºC
A		 9.5
PD
@TA = 25ºC
W		 1.19
RDS(on) Max (mΩ) @ VGS 10V 15
RDS(on) Max (mΩ) @ VGS 4.5V 18
CISS typ.
@VDS = 15V
pF		 1932
675
Qg typ.
@VGS = 10V
pF		 42
16

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Package Outline Information

  • SO-8
SO-8
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