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DMTH6016LFDFWQ

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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This MOSFET is designed to meet the stringent requirements of Automotive applications. The device is qualified to AEC-Q101, supported by a PPAP.

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
Low RDS(ON)—Ensures On-State Losses Are Minimized
0.6mm Profile—Ideal for Low-Profile Applications
PCB Footprint of 4mm2
Sidewall plated for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	9.4 A
P_D @T_A = +25°C (W)	2.3 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	18 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	27.5 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	15.3 nC
C_ISS Typ (pF)	925 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMTH6016LFDFWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf