20V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 218 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 4.6 |
| PD @TA = +25°C (W) | 1.4 |
| Polarity | P |
| QG Typ @ |VGS| = 4.5V (nC) | 2.5 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 65 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 45 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 6 |
| |VGS(TH)| Max (V) | 1.2 |
| |VGS(TH)| Min (V) | 0.4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
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