Diodes Incorporated
PowerDI5060 8

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DMNH15H110SPS (Not Recommended for new design)

NRND = Not Recommended for New Design

150V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON) – Minimizes Power Losses
  • Low Qg – Minimizes Switching Losses
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC/DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 75
CISS Typ (pF) 989
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TC = +25°C (A) 27
PD @TA = +25°C (W) 1.5
Polarity N
QG Typ @ |VGS| = 10V (nC) 25.5
AEC Qualified No
RDS(ON)Max@ VGS(10V)(mΩ) 90
|VDS| (V) 150
|VGS| (±V) 20
|VGS(TH)| Max (V) 4

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2593 2022-11-02 2023-05-02 Device End of Life (EOL)
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products