Diodes, Inc.
Discrete and Analog Solutions

About Diodes' Wafer Fab

INTRODUCTION

Occupies approximately 70,000 sq. ft. of the "Summit Technologies Center".

HISTORY

Started operations when the equipment was purchased from AT&T Microelectronics on Dec 21, 1995. Operations commenced on February 14, 1996.

In becoming an accepted supplier in the international market, became registered with such internationally recognized certifications as:

  • ISO-9002 March 19, 1997
  • ISO 9001 September 4, 1997
  • QS-9000 March 19,1998
  • QS-9000 AEC-A100 September 3,1999
  • ISO 9001:2000 May 24 2004

COMMITTED TO QUALITY

MISSION STATEMENT
Become the "foundry of choice" for epitaxy, and full processed wafers for major semiconductor device suppliers based on Quality- Cost- Delivery.

QUALITY POLICY
Excellence is the foundation upon which we design, market, produce and deliver our products. Based on this belief, our policy is:

PRODUCTS
Two distinct business areas:

EPI - Using polished wafers, we apply thin epitaxial layers (3µm to 200µm) of single crystal silicon to silicon wafers for various customers & for our internal use.

Wafer Fabrication - Process wafers and provide the following products:

  • Standard VF-Single Anode: 20V, 40V, 45V, 60V
  • Standard VF-Dual Anode: 40V
  • Low IR-Single Anode: 45V, 60V, 100V
  • Low IR-Dual Anode: 45V, 60V, 100V
  • Low VR-Single Anode: 20V, 30V, 40V
  • High Voltage (100V+)

PRODUCT APPLICATIONS
Switching Mode Power Supplies

  • Switching Mode Power Supplies
  • Video Monitors
  • Personal Computers
  • Cellular Telephones
  • Automotive Alternators
product search

Quick view

advanced (parametric) search
package search
keyword search
© Diodes, Inc.
PowerDI and SBR are registered trademarks of Diodes Incorporated.
webmaster@diodes.com
Recommend use of latest browser versions, e.g. IE6.0 & later, Mozilla FireFox1.5 & later. Find free upgrades at www.microsoft.com and www.mozilla.com.