Products

DIOFET (Diodes Schottky Integrated MOSFET)

Diofet products

DIOFET is a proprietary process that monolithically integrates apower MOSFET with a Schottky diode into a single Silicon chip. Theintegrated Schottky reduces the forward voltage drop of the body diodeby almost 50% and also has a lower reverse recovery charge.

Diofet

In application, this means the conduction and switching losses are reduced, and overall the circuit will operate at a higher efficiency with a reduced operating temperature. In addition, the DIOFET is an avalanche rugged process and the devices have a low gate capacitance ratio to reduce the risk of shoot-through currents.

The DIOFET is well suited for Point of Load (PoL) DC-DC converters usedin computing, telecoms and industrial applications including:

  • Laptops, Netbooks and Notebooks
  • Set-Top Boxes
  • Servers and Desktop Computers
  • Telecom Equipment

 

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| multi-filter
Config/ Polarity
Dual N Channel
N + Schottky
N Channel
from  to 
ESD Diodes Y/N
N
from  to 
VDS
(V)
30
from  to 
VGS
(±V)
12
20
25
from  to 
IDS @ TA = +25°C (A)
7
7.2
8
9
9.5
9.8
10
10.2
10.4
11
11.2
12.7
16
from  to 
PD @ TA = +25°C (W)
0.89
0.98
1
1.19
1.54
1.55
1.79
from  to 
RDS(ON) Max (mΩ) @ VGS
(10V)
10
11.9
12
12.5
13
14.0
15
from  to 
RDS(ON) Max (mΩ) @ VGS
(4.5V)
14
14.8
14.9
15
15.4
16
18
18.5
from  to 
CISS Typ @ VDS = 15V (pF)
478.9
675
1276
1296
1849
1886
1932
2296
from  to 
QG Typ @ VGS = 10V (pF)
10.5
16
19.3
30.6
31.6
42
43
44.6
45.7
46
from  to 
Package Outlines
SO-8
POWERDI3333-8

Data
Sheet
Part Number Config/ Polarity ESD Diodes Y/N VDS
(V)
VGS
(±V)
IDS @ TA = +25°C (A) PD @ TA = +25°C (W) RDS(ON) Max (mΩ) @ VGS
(10V)
RDS(ON) Max (mΩ) @ VGS
(4.5V)
CISS Typ @ VDS = 15V (pF) QG Typ @ VGS = 10V (pF) Package Outlines
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  N + Schottky
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  7
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  0.89
  0.98
  1
  1.19
  1.54
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  12
  12.5
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  15
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  14.8
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  675
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  2296
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  16
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  POWERDI3333-8

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DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 12.7 1.54 12.5 14.8 1849 43

DMG4712SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 11.2 1.55 14.0 15.4 2296 46

DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 8 1.54 15 18.5 1849 43

DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 12
25
9.5 1.19 15 18 1932
675
42
16

DMG7702SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 20 16 0.89 10 15 1296 31.6

DMS3012SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 20 16 0.89 10 15 1296 31.6

DMS3014SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
N Channel N 30 12 10.2 1 13 14 2296 19.3

DMS3014SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 10.4 1.55 13 14 2296 45.7

DMS3015SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 20 11 1.55 11.9 14.9 1276 30.6

DMS3016SFG
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N Channel N 30 12 10.2 0.98 13 16 1886 44.6

DMS3016SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
N + Schottky N 30 12 9.8 1.54 13 16 1849 43

DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 20 10
7.2
1.79 12 15 1276
478.9
30.6
10.5

DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Dual N Channel N 30 12
20
9
7
1.79 15 18 1932
478.9
42
10.5
Total Found 13 items